Crystallinity improvement and low-temperature growth of inorganic thin films by dopant-assisted crystallization
DOI:
https://doi.org/10.51094/jxiv.926Keywords:
crystal growth, thin film, sputtering, Bi, InSb, GaSb, AgAbstract
用途が多岐にわたる薄膜材料の高品質化，製造温度の低温化は，数十年前から重要な課題とされている．ドーパント支援結晶化は半導体薄膜の結晶欠陥の低減などに使用されてきた技術であり，本課題の解決に貢献できると考えられる．著者は以前の研究において，本技術が有機金属分解法で成膜した酸化物に有効であることを示した．本稿では，InSb，GaSbおよびAg薄膜を本技術でPIフィルム上にスパッタ成長させた結果を紹介する．ドーパントの種類，添加量を調整することで，これらの薄膜の構造的な乱れと結晶欠陥が低減したことに加え，配向性が制御できた．GaSb薄膜ではよい結晶性を得るために必要な成長温度（500 °C程度）と比較して低い成長温度（320 °C）で，上述の効果が現れた．また，薄膜の配向性の制御は，Ag薄膜の特性を劣化させる凝集の抑制に寄与できる．このように，ドーパント支援結晶化を利用した結晶成長技術は様々な金属，酸化物，半導体薄膜に対して製造方法によらず利用できる可能性がある．
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