General Analytical Formulas for Non-Superjunction Unipolar Limit

Fujihira, Tatsuhiko

doi:10.51094/jxiv.3739

##article.authors##

Fujihira, Tatsuhiko Fuji Electric Co., Ltd.

DOI:

https://doi.org/10.51094/jxiv.3739

キーワード:

power semiconductor、 unipolar limit、 on-resistance、 breakdown voltage、 punch-through、 ideal specific on-resistance

抄録

General analytical formulas for non-superjunction unipolar limit, or the ideal specific on-resistance and the optimum design of semiconductor unipolar devices with punch-through (PT) structure, were derived based on power law approximation of the electric field dependence of effective impact ionization coefficient. The ideal specific on-resistance calculated using the derived analytical formulas and the electric field dependence of the impact ionization coefficient in the previous research well matched to the numerically simulated ones of 4H-SiC and GaN PT structures and was 12% lower than the analytically calculated one of Si non-punch-through (NPT) structure in the previous research. The optimum designs of the drift region width in PT structures were suggested to be 3/4 for Si, 11/15 for 4H-SiC, between 11/15 and 28/39 for GaN, and around 16/21 for b-Ga₂O₃, respectively, of the maximum depletion region width of the NPT structure having the same drift region doping density. Using the derived analytical formulas, it became possible to estimate optimum design parameters and ideal specific on-resistance of non-superjunction PT unipolar devices of any semiconductor material without a large number of numerical simulations if electric field dependence of the carrier mobility and electric field dependence of effective impact ionization coefficient are known.

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引用文献

(1) C. Hu, A parametric study of power MOSFETs, Rec. Power Electron. Specialists Conf., 1979, pp. 385-395.

(2) B. J. Baliga, Modern Power Devices (Wiley, New York, 1987) reprint ed. 1992, pp. 151-157.

(3) T. Fujihira, Theory of semiconductor superjunction devices, Jpn. J. Appl. Phys. 36, 1997, pp. 6254-6262.

(4) T. Kobayashi, H. Abe, Y. Niimura, T. Yamada, A. Kurosaki, T. Hosen, and T. Fujihira, High-voltage power MOSFETs reached almost to the Si limit, Proc. Int. Symp. Power Semiconductor Devices and ICs, 2001, pp. 435-438.

(5) T. Kimoto, Updated trade-off relationship between specific on-resistance and breakdown voltage in 4H-SiC {0001} unipolar devices, Jpn. J. Appl. Phys. 58, 018002 (2019)

(6) R. Kosugi, S. Ji, K. Mochizuki, K. Adachi, S. Segawa, Y. Kawada, Y. Yonezawa, and H. Okumura, Breaking the theoretical limit of 6.5kV-class 4H-SiC super-junction (SJ) MOSFETs by trench-filling epitaxial growth, Proc. Int. Symp. Power Semiconductor Devices and ICs, 2019, pp. 39-42.

(7) M. Xiao, Y. Ma, Z. Du, Y. Qin, K. Liu, K. Cheng, F. Udrea, A. Xie, E. Beam, B. Wang, J. Spencer, M. Tadjer, T. Anderson, H. Wang, and Y. Zhang, First Demonstration of Vertical Superjunction Diode in GaN, Int. Electron Devices Meet., 2022, pp. 851-854.

(8) Q. Liu, X. Zhou, M. H. Wong, H. Yao, J. Zhou, X. Zhang, G. Xu, and S. Long, 1-kV -Ga2O3 UMOSFET with Quasi-Inversion Nitrogen-Ion-Implanted Channel, Proc. Int. Symp. Power Semiconductor Devices and ICs, 2024, pp. 236-239.

(9) N. Donato, N. Rouger, J. Pernot, G. Longobardi, and F. Udrea, Diamond power devices: state of the art, modelling, figures of merit and future perspective, J. Phys. D: Appl. Phys. 53, 093001 (2020).

(10) K. Woo, Z. Bian, M. Noshin, R. P. Martinez, M. Malakoutian, B. Shankar, and S. Chowdhury, From wide to ultrawide-bandgap semiconductors for high power and high frequency electronic devices, J. Phys.: Mater. 7, 022003 (2024).

(11) B. J. Baliga, Advanced Power MOSFET Concept (Springer, New York, 2010), pp. 6-8.

(12) W. Fulop, Calculation of Avalanche Breakdown Voltage of Silicon p-n Junctions, Solid-State Electron. 10, 1967, pp. 39-43.

(13) B. J. Baliga, Fundamentals of Power Semiconductor Devices (Springer, New York, 2008) 2nd ed., 2018, pp. 90-100 pp. 175-183.

(14) T. Maeda, Study on Avalanche Breakdown in GaN [PhD thesis] (Kyoto Univ., Kyoto, 2020), pp. 208-220.

(15) S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981) 2nd ed., pp. 99-108.

(16) W. S. Loh, B. K. Ng, J. S. Ng, S. I. Soloviev, H.-Y. Cha, P. M. Sandvik, C. M. Johnson, and J. P. R. David, Impact Ionization Coefficients in 4H-SiC, IEEE Trans. Electron Devices 55, 2008, pp. 1984-1990.

(17) J. E. Green, W. S. Loh, A. R. J. Marshall, B. K. Ng, R. C. Tozer, J. P. R. David, S. I. Soloviev, and P. M. Sandvik, Impact Ionization Coefficients in 4H-SiC by Ultralow Excess Noise Measurement, IEEE Trans. Electron Devices 59, 2012, pp. 1030-1036.

(18) B. K. Ng, J. P. R. David, R. C. Tozer, G. J. Rees, F. Yan, J. H. Zhao, and M. Weiner, Nonlocal Effects in Thin 4H-SiC UV Avalanche Photodiodes, IEEE Trans. Electron Devices 50, 2003, pp. 1724-1732.

(19) H. Niwa, J. Suda, and T. Kimoto, Impact Ionization Coefficients in 4H-SiC Toward Ultrahigh-Voltage Power Devices, IEEE Trans. Electron Devices 62, 2015, pp. 3326-3333.

(20) A. Hiraiwa and H. Kawarada, Figure of merit of diamond power devices based on accurately estimated impact ionization processes, J. Appl. Phys. 114, 034506 (2013).

(21) L. Cao, J. Wang, G. Harden, H. Ye, R. Stillwell, A. J. Hoffman, and P. Fay, Experimental characterization of impact ionization coefficients for electrons and holes in GaN grown on bulk GaN substrates, Appl. Phys. Lett. 112, 262103 (2018).

(22) D. Ji, B. Ercan, and S. Chowdhury, Experimental determination of impact ionization coefficients of electrons and holes in gallium nitride using homojunction structures, Appl. Phys. Lett. 115, 073503 (2019).

(23) T. Maeda, T. Narita, S. Yamada, T. Kachi, T. Kimoto, M. Horita, and J. Suda, Impact ionization coefficients and critical electric field in GaN, J. Appl. Phys. 129, 185702 (2021).

(24) K. Ghosh and U. Singisetti, Impact ionization in β-Ga2O3, J. Appl. Phys. 124, 085707 (2018).

(25) S. J. Pearton, F. Ren, M. Tadjer, and J. Kim, Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS, J. Appl. Phys. 124, 220901 (2018).

(26) T. Sugiura and N. Nakano, Impact Ionization and Critical Electric Field in (010)-Oriented -Ga2O3 Schottky Barrier Diode, IEEE Trans. Electron Devices 69, 2022, pp. 3068-3072.

(27) C. Jacoboni, C. Canali, G. Ottaviani, and A. A. Quaranta, A Review of Some Charge Transport Properties of Silicon, Solid-State Electron. 20, 1977, pp. 77-89.

(28) N. Ma, N. Tanen, A. Verma, Z. Guo, T. Luo, H. Xing, and D. Jena, Intrinsic electron mobility limits in β-Ga2O3, Appl. Phys. Lett. 109, 212101 (2016).

(29) T. Fujihira, Ideal Specific On-Resistance of Silicon Unipolar Devices, Fujidenki Gihou (Fuji Electric Journal) 98, 2025, pp. 199-204 [in Japanese].

(30) J. A. Cooper and D. T. Morisette, Performance Limits of Vertical Unipolar Power Devices in GaN and 4H-SiC, IEEE Electron Device Lett. 41, 2020, pp. 892-895.

(31) A. G. Chynoweth, Ionization Rates for Electrons and Holes in Silicon, Phys. Rev. 109, 1958, pp. 1537-1540.