Nanocrystalline Mg2Si Thin Films Deposited by High-Power Impulse Magnetron Co-Sputtering Using Segmented Mg-Si Target

Hyuga Kobayashi; Daito  Tanaka; Sugawara, Hiroharu; Yuya  Takahashi; Tetsuhide  Shimizu; Tatsuro  Hanajiri; Keiichi  Yanagisawa; Fumitaka  Sakamoto

doi:10.51094/jxiv.2427

##article.authors##

Hyuga Kobayashi Graduate School of Systems Design, Tokyo Metropolitan University
Daito Tanaka Graduate School of Systems Design, Tokyo Metropolitan University
Sugawara, Hiroharu Graduate School of Systems Design, Tokyo Metropolitan University https://orcid.org/0000-0002-0071-2396 https://researchmap.jp/read0075327
Yuya Takahashi Graduate School of Systems Design, Tokyo Metropolitan University
Tetsuhide Shimizu Graduate School of Systems Design, Tokyo Metropolitan University
Tatsuro Hanajiri Graduate School of Science and Engineering, Toyo University
Keiichi Yanagisawa Bio-Nano Electronics Research Centre, Toyo University
Fumitaka Sakamoto Bio-Nano Electronics Research Centre, Toyo University

DOI:

https://doi.org/10.51094/jxiv.2427

キーワード:

Mg2Si、 High-Power Impulse Magnetron Sputtering、 HiPIMS、 thin film、 nanocrystalline,、 magnetron sputtering

抄録

We report the formation of nanocrystalline Mg2Si thin films deposited using co-deposition via high-power impulse magnetron sputtering (HiPIMS) with a segmented Mg-Si target. The peak power density was estimated to be 0.26 kWcm-2. The films were deposited on heated silicon substrates at a substrate temperature set to 400 °C without a substrate bias. X-ray diffraction and X-ray photoelectron spectroscopy indicated the formation of the Mg2Si crystalline phase on the as-deposited surface without post-annealing. Scanning electron microscopy revealed a crack-free surface with nanoscale crystallites of 30–150 nm, exhibiting clear facets.

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